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EE380 Exp 3

This document describes an experiment to extract BJT model parameters. It involves measuring the current gain β, reverse active current gain βr, base-collector forward voltage drop, IC vs. VCE characteristics for a fixed IB, VA through measurement of small signal output resistance ro, thermal voltage VT, and saturation current IS. Plots and circuit diagrams are provided to illustrate the measurements and assumptions made in the model.

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65 views11 pages

EE380 Exp 3

This document describes an experiment to extract BJT model parameters. It involves measuring the current gain β, reverse active current gain βr, base-collector forward voltage drop, IC vs. VCE characteristics for a fixed IB, VA through measurement of small signal output resistance ro, thermal voltage VT, and saturation current IS. Plots and circuit diagrams are provided to illustrate the measurements and assumptions made in the model.

Uploaded by

Divij
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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EE380: EC Lab

Exp. 3 : Extraction of BJT Model


parameters

B. Mazhari
Dept. of EE, IIT Kanpur

1G-Number
B. Mazhari, IITK
SPECS.
Simplified Device
Design Process Model

Circuit
Schematic

Circuit Device
Simulation Model

Predicted
Results

No Specs.
Satisfied?

Yes

2G-Number
B. Mazhari, IITK
1. Measurement of current Gain β

Measure VBE and VCEsat also


3G-Number
B. Mazhari, IITK
2. Measure reverse active current Gain βr and base
collector forward voltage drop

4G-Number
B. Mazhari, IITK
3. Display IC vs. VCE Characteristics on CRO for a fixed
I B.

2.5

IC (mA) 2.0

1.5

1.0

0.5

0.0

0.0 0.2 0.4 0.6 0.8 1.0


VCE(V)

5G-Number
B. Mazhari, IITK
Circuit Diagram

Assumption IC ~ IE 6G-Number
B. Mazhari, IITK
10

6
-V O (V)

0
0.00 0.25 0.50 0.75 1.00

VCE(V)
7G-Number
B. Mazhari, IITK
Some Incorrect Plots
2.5 5

2.0 4

1.5 3

-VO(V)
-VO

1.0 2

0.5 1

0
0.0

0 2 4 6 8 10 12
0.08 0.10 0.12 0.14 0.16 0.18 0.20
VCE VCE(V)
Collector resistance too large Collector resistance too small

12

10

6
-VO

0 2 4 6 8 10

VCE(V)

Feedback resistor too large 8G-Number


B. Mazhari, IITK
4. Measurement of VA

VBE
VCE
I C  I S  (1  )e VT

VA

IC

-VA VCE
9G-Number
B. Mazhari, IITK
Estimation of VA through measurement of small signal
output resistance rO
V
VCE BE
VCE vce
I C  I S  (1  )  e VT ro  IB  VA I C ro 
VA I C ic

10
G-Number
B. Mazhari, IITK
5. Measure thermal voltage VT and saturation current IS

VBE

IC  I S  e VT

Measure for R1 of 10k and 100k

11
G-Number
B. Mazhari, IITK

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