T-RAM

Computer memory types
Volatile
RAM
DRAM (e.g., DDR SDRAM) SRAM
In development T-RAM Z-RAM
Historical
Williams–Kilburn tube (1946–47) Delay line memory (1947) Selectron tube (1953) Dekatron
Non-volatile
ROM
Mask ROM PROM EPROM EEPROM
NVRAM
Flash memory Solid-state storage
Early stage NVRAM
nvSRAM FeRAM MRAM PRAM
Mechanical
Magnetic tape Hard disk drive Optical disc drive
In development
3D XPoint CBRAM SONOS RRAM Racetrack memory NRAM Millipede memory FJG RAM
Historical
Paper data storage (1725) Drum memory (1932) Magnetic-core memory (1949) Plated wire memory (1957) Thin-film memory (1962) Twistor memory (~1968) Bubble memory (~1970)

Thyristor RAM (T-RAM) is a new (2009) type of random-access memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed. This technology, which exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor, is used to create memory cells capable of very high packing densities. Due to this, the memory is highly scalable, and already has a storage density that is several times higher than found in conventional six-transistor SRAM memory. It was expected that the next generation of T-RAM memory will have the same density as DRAM.

External links

• T-RAM Semiconductor
• T-RAM Description
• EE Times: GlobalFoundries to apply thyristor-RAM at 32-nm node
• Semiconductor International: GlobalFoundries Outlines 22 nm Roadmap